Home  »  Products » Power Diode (Stud / Flat Type)

Product Details

Silicon Diodes Manufacturer are electronic components that conduct current in only one direction.  In function, they are similar to one-way valves. Silicon Diodes Manufacturer using semiconductor materials such as silicon, germanium or selenium and are used as voltage regulators, signal rectifiers, oscillators and signal modulators / demodulators.

Semiconductor diodes consist of a PN junction having two terminals, an anode (+) and a cathode (-). Current flows from the anode to the cathode within the diode .  Diodes can be used as voltage regulators, tuning devices in RF tuned circuits, frequency multiplying devices in RF circuits, mixers in RF circuits, switching applications, or can be used to make logic decisions in digital circuits.

Diodes can be sub-divided into six major categories:

  • General purpose diodes Manufacturer (or PN junction diodes)
  • PIN diodes manufacturer
  • Schottky barrier diodes manufacturer
  • Step-recovery diodes manufacturer
  • Varactor diodes manufacturer
  • Zener diodes manufacturer

PIN diodes Manufacturer are three-layer semiconductor diodes consisting of an intrinsic layer separating heavily doped P and N layers. The charge stored in the intrinsic layer in conjunction with other diode parameters determines the resistance of the diode at RF and microwave frequencies. This resistance typically ranges from kilo ohms to less than 1 ohm for a given diode. PIN diodes are typically used as switches or attenuator elements

Step-recovery diodes employ graded doping where the doping level of the semi conductive materials is reduced as the PN junction is approached. This produces an abrupt turn-off time by allowing a very fast release of stored charge when switching from forward to reverse bias. It also allows a rapid re-establishment of forward current when switching from reverse to forward bias. These diodes are used in very high frequency (VHF) and fast switching applications.

Varactor diodes are p-n junction diodes that are designed to act as a voltage-controlled capacitance when operated under reverse bias. One characteristic of PN junctions is inherent capacitance. When the junction is reverse biased, increasing the applied voltage will cause the depletion region to widen, thus increasing the effective distance between the two “plates” of the capacitor and decreasing the effective capacitance. By adjusting the doping gradient and junction width, the capacitance range can be controlled and changes can be applied using reverse voltage. A four-to-one capacitance range is not unusual; a typical varactor diode (sometimes called a “varicap diode”) might vary from

Schottky diodes in their simplest form consist of a metal layer that contacts a semiconductor element. The metal / semiconductor junctions exhibit rectifying behavior (i.e., the current passes through the structure more readily with one polarity than the other). Schottky diodes are used primarily in high frequency, fast-switching applications, and in many digital circuits to decrease switching times.

(A)
silicondiodes1
(B)
silicondiodes2
(C)
silicondiodes3
(D)
silicondiodes4
(E)
silicondiodes5
(F)
silicondiodes6
(G)
silicondiodes7
(H)
silicondiodes8
Introduction

We have combined the thermal, Electrical & Mechanical data of IRI range of medium and high power Silicon being manufactured by us…

Coding

6 N A 60
Average forward current N-Normal Polarity R-Reverse Polarity Housing VRRM / 10

1st letter indicates the current rating of diode.

2nd letter indicates for Normal or Reverse Polarity

3rd letter indicates the size of diode as A, B, C, D, E, F, G & H (refer figures)

4th number indicates the voltage group

Power Diodes (Stud / Flat Type)
Device Type VRRM IF(AV) TC VF
@
I Peak
IFSM I2t IRRM Rth(j-c) Mounting
Torque
Heat
Sink
Rec
Thread Package Out-line
(V) (A) (°C) (V) (A) A2Sx103 (mA) (°C/W) (Nm)
6NNRA 400-1600 6 160 1.10 159 0.127 2 2.5 2 61 M-6 DO-4 A
12NNRA 400-1600 12 160 1.30 265 0.351 2 2.0 2 K1 M-6 DO-4 A
16NA/RA 400-1600 16 160 1.20 350 0.612 4 1.6 2 K1 M-6 DO-4 A
25NA/RA/NB/RB 400-1600 25 140 1.35 400 0.80 4 1.5 2 Kl, K2 M-6,10/32″ DO-4, DO-5 A,B
40NB/RB 400-1600 40 140 1.35 500 1.25 10 1.0 4 K2, K3 M-6,M-8, 1/4″ DO-5 B
PA040A/PA040C 800-1000 40 140 1.35 500 1.25 10 1.0 4 RRA M-8 DO-5 B
7ONC/RC 400-1600 70 140 1.35 1200 7.1 10 0.45 4 K3, K4 M-6.M-8.1/4″ DO-5 C
100NE/RE/ND/RD 400-1600 100 130 1.50 2200 24.0 15 0.40 10 K4, K5 M-16, Flat DO-8 E.D
150NE/RE/ND/RD 400-1600 150 130 1.40 3570 64.0 22 0.25 10 K4, K5 M-16, Flat DO-8 E.D
200NE/RE/ND/RD 400-1600 200 130 1.35 3650 66.0 22 0.25 10 K4, K5 M-16, Flat DO-8 E,D
250NF/RF/NG/RG 400-1600 250 130 1.35 4500 92.5 40 0.18 30 K5 M-20, Flat DO-9 F,G
300NF/RF/NG/RG 400-1600 300 130 1.40 5000 125.0 50 0.12 30 K5 M-20, Flat DO-9 F,G
320NF/RF/NG/RG 400-1600 320 130 1.65 5500 151.0 50 0.12 30 K5 M-20, Flat DO-9 F,G
350NF/RF/NG/RG 400-1600 350 125 1.20 6000 180.0 50 0.12 30 K5 M-20, Flat DO-9 F,G
400NJ/RJ/NF/RF 400-1600 400 120 1.62 8250 340.0 50 0.12 50 K5 M-24, Flat DO-9 J,F
410NU/RU 1200-3600 410 120 1.15 7000 245.0 50 0.15 15 /Bolt ED, K5 Flat U U
570NU/RU 1200-4300 570 80 1.65 12000 725.0 50 0.065 15 /Bolt ED Flat U U
860NU/RU 1200-1800 860 80 1.65 16000 725.0 50 0.065 15 /Bolt ED Flat U U

Download Diode Enquiry Form