| DCR504ST |
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APPLICATIONS |
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KEY PARAMETERS |
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VDRM |
1600V |
IT(AV) |
355A |
ITSM |
6800A |
dVdt* |
200V/µs |
dl/dt |
700A/µs |
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High Power Drives. |
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High Voltage Power Supplies. |
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DC Motor Control. |
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| FEATURES |
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Double Side Cooling. |
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High Surge Capability. |
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*Higher dV/dt selections available |
High Mean Current. |
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Fatigue Free. |
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| VOLTAGE RATING |
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Type Number |
Repetitive Peak Voltage
VDRMVRRM
V |
Conditions |
DCR504ST14 |
1400 |
Tvj= O° to 125°C |
DCR504ST13 |
1300 |
IDRM= IRRM = 30mA, |
DCR504ST12 |
1200 |
VDRM' VRRM tP = 10ms, |
DCR504ST11 |
1100 |
VDSM& VRSM= |
DCR504ST10 |
1000 |
VDRM& VRRM + 100V Respectively |
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| Lower voltage grades available. |
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Outline type code:T. See package outline for further information. |
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| CURRENT RATINGS |
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Symbol |
Parameter |
Conditions |
Max. |
Units |
| Double Side Cooled |
IT(AV) |
Mean on-state current |
Half wave resistive load, TCASE = 80° C |
355 |
A |
IT(RMS) |
RMS Value |
TCASE = 80° C |
557 |
A |
IT |
Continuous (direct) on-state current |
TCASE = 80° C |
495 |
A |
| Single Side Cooled (Anode side) |
IT(AV) |
Mean on - state current |
Half wave resistive load, TCASE = 80° C |
248 |
A |
IT(RMS) |
RMS Value |
TCASE = 80° C |
390 |
A |
IT |
Continuous (direct) on-state current |
TCASE = 80° C |
310 |
A |
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| SURGE RATINGS |
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Symbol |
Parameter |
Conditions |
Max. |
Units |
ITSM |
Surge (non-repetitive) on -state current |
10ms half sine; TCASE = 125° C
VR = 50% VRRM - 1/4 sine |
5.5 |
kA |
I2t |
I2t for Fusing |
150 * 103 |
A2S |
ITSM |
Surge (non-repetitive) on -state current |
10ms half sine; TCASE = 125° C
VR = 0 |
6.8 |
kA |
I2t |
I2t for Fusing |
231 * 103 |
A2'S |
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| THERMAL AND MECHANICAL DATA |
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Symbol |
Parameter |
Conditions |
Min. |
Max. |
Units |
Rth(j-c) |
Thermal Resistance - junction to case |
Double Side Cooled |
dc |
- |
0.063 |
° C/W |
| Single Side Cooled |
Anode dc |
- |
0.11 |
° C/W |
| Cathode dc |
- |
0.147 |
° C/W |
Rth(c-h) |
Thermal Resistance - case to heatsink |
Clamping force 12.0kN with mounting compound |
Double side |
- |
0.02 |
° C/W |
| Single side |
- |
0.04 |
° C/W |
Tvj |
Virtual junction temperature |
On - state (conducting) |
- |
135 |
° C |
| Reverse (blocking) |
125 |
° C |
Tstg |
Storage temperature range |
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-55 |
125 |
° C |
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Clamping force |
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4.0 |
5.0 |
kN |
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| DYNAMIC CHARACTERSTICS |
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Symbol |
Parameter |
Conditions |
Typ. |
Max. |
Units |
IRRM/IDRM |
Peak reverse and off- state current |
At VRRM /VDRM' TCASE = 125°C
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30 |
mA |
dV/dt |
Maximum linear rate of rise of off-state voltage |
To 67% VDRM T1 = 125° C. Gate open circuit. |
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200 |
V/µs |
dl/dt |
Rate of rise of on-state current |
From 67% VDRM to 700A Gate source 10V, 5Ω tr ≤ 0.5 µs, T1 =125°C |
Repetitive 50 Hz |
- |
350 |
A/µs |
Non-repetitive |
- |
700 |
A/µs |
VT(TO) |
Threshold Voltage |
At Tvj = 125°C |
- |
1.05 |
V |
TT |
On-state slope resistance |
At Tvj = 125°C |
- |
0.8 |
mΩ |
tgd |
Delay time |
VD=67% VDRM'Gate source 20V, 10Ω dlG /dt = 20A/µs, T1= 25°C |
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0.8 |
µs |
IL |
Laching current |
T1 = 25°C, VD = 10V |
350 |
200 |
mA |
IH |
Holding current |
T1 = 25°C, Rg-k = -- |
40 |
30 |
mA |
tq |
Turn-off time |
IT= 300A, tp = 1ms, T1 = 125°C, VR = 50 V, dlRR/dt = 20A/µs,VDR= 67% VDRM'dVDR/dt = 20V/µs linear |
300 |
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µs |
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| GATE TRIGGER CHARACTERISTICS AND RATINGS |
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Symbol |
Parameter |
Conditions |
Max. |
Units |
VGT |
Gate Trigger Voltage |
VDPM= 5V, TCASE= 25°C |
3.0 |
V |
IGT |
Gate Trigger Current |
VDPM= 5V, TCASE= 25°C |
150 |
mA |
VGD |
Gate non-trigger voltage |
At VDPM TCASE= 125°C |
0.25 |
V |
VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
30 |
V |
VFGM |
Peak forward gate voltage |
Anode negative with respect to cathode |
0.25 |
V |
VRGM |
Peak reverse gate voltage |
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5 |
V |
IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
10 |
A |
PGM |
Peak gate power |
See table, fig. 4 |
100 |
W |
PG(AV) |
Mean gate power |
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5 |
W |
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| PACKAGE OUTLINE-T |
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| For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. |
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