| |
|
|
| DCR804SG |
|
|
| |
|
|
| |
|
|
| |
|
|
APPLICATIONS |
|
KEY PARAMETERS |
| |
|
| |
VDRM |
2200 |
IT(AV) |
820A |
ITSM |
14000A |
dVdt* |
300V/µs |
dl/dt |
1000A/µs |
|
High Power Drives. |
|
|
High Voltage Power Supplies. |
|
DC Motor Control. |
|
| |
|
| |
|
| FEATURES |
| |
|
|
| |
|
*Higher dV/dt selections available |
High Surge Capability. |
|
|
High Mean Current. |
|
|
Fatigue Free. |
|
|
| |
|
|
| VOLTAGE RATING |
|
|
| |
|
|
Type Number |
Repetitive Peak Voltage
VDRMVRRM
V |
Conditions |
DCR804SG18 |
1800 |
Tvj= O° to 125°C |
DCR804SG17 |
1700 |
IDRM= IRRM = 50mA, |
DCR804SG16 |
1600 |
VDRM' VRRM tP = 10ms, |
DCR804SG15 |
1500 |
VDSM& VRSM= |
DCR804SG14 |
1400 |
VDRM& VRRM + 100V Respectively |
|
|
|
| Lower voltage grades available. |
|
Outline type code:G. See package outline for further information. |
| |
|
|
| |
|
|
| CURRENT RATINGS |
|
|
| |
|
|
Symbol |
Parameter |
Conditions |
Max. |
Units |
| Double Side Cooled |
IT(AV) |
Mean on-state current |
Half wave resistive load, TCASE = 80° C |
820 |
A |
IT(RMS) |
RMS Value |
TCASE = 80° C |
1285 |
A |
IT |
Continuous (direct) on-state current |
TCASE = 80° C |
1085 |
A |
| Single Side Cooled (Anode side) |
IT(AV) |
Mean on - state current |
Half wave resistive load, TCASE = 80° C |
505 |
A |
IT(RMS) |
RMS Value |
TCASE = 80° C |
793 |
A |
IT |
Continuous (direct) on-state current |
TCASE = 80° C |
620 |
A |
|
| |
|
|
| SURGE RATINGS |
|
|
| |
|
|
Symbol |
Parameter |
Conditions |
Max. |
Units |
ITSM |
Surge (non-repetitive) on -state current |
10ms half sine; TCASE = 125° C
VR = 50% VRRM - 1/4 sine |
11.2 |
kA |
I2t |
I2t for Fusing |
625 * 103 |
A2S |
ITSM |
Surge (non-repetitive) on -state current |
10ms half sine; TCASE = 125° C
VR = 0 |
14.0 |
kA |
I2t |
I2t for Fusing |
975 * 103 |
A2S |
|
| |
| THERMAL AND MECHANICAL DATA |
| |
Symbol |
Parameter |
Conditions |
Min. |
Max. |
Units |
Rth(j-c) |
Thermal Resistance - junction to case |
Double Side Cooled |
dc |
- |
0.032 |
° C/W |
| Single Side Cooled |
Anode dc |
- |
0.064 |
° C/W |
| Cathode dc |
- |
0.064 |
° C/W |
Rth(c-h) |
Thermal Resistance - case to heatsink |
Clamping force 12.0kN with mounting compound |
Double side |
- |
0.008 |
° C/W |
| Single side |
- |
0.016 |
° C/W |
Tvj |
Virtual junction temperature |
On - state (conducting) |
- |
135 |
° C |
| Reverse (blocking) |
125 |
° C |
Tstg |
Storage temperature range |
|
-55 |
125 |
° C |
| |
Clamping force |
|
11.0 |
13.0 |
kN |
|
| |
| DYNAMIC CHARACTERSTICS |
| |
Symbol |
Parameter |
Conditions |
Typ. |
Max. |
Units |
IRRM/IDRM |
Peak reverse and off- state current |
At VRRM /VDRM' TCASE = 125°C
|
- |
50 |
mA |
dV/dt |
Maximum linear rate of rise of off-state voltage |
To 67% VDRM T1 = 125° C. Gate open circuit. |
- |
300 |
V/µs |
dl/dt |
Rate of rise of on-state current |
From 67% VDRM to 1500A Gate source 1.5 A tr = 0.5 µs, T1 =125°C |
Repetitive 50 Hz |
- |
500 |
A/µs |
Non-repetitive |
- |
1000 |
A/µs |
VT(TO) |
Threshold Voltage |
At Tvj = 125°C |
- |
0.85 |
V |
RT |
On-state slope resistance |
At Tvj = 125°C |
- |
0.38 |
mΩ |
tgd |
Delay time |
VD=67% VDRM'Gate source 30V, 15Ω tr= 0.5µs, T1 = 25° C |
- |
1.5 |
µs |
tq |
Turn-off time |
IT= 1000A, tp = 1ms, T1 = 125°C, VR = 50 V, dlRR/dt = 20A/µs,VDR= 67% VDRM'dVDR/dt = 20V/µs linear |
200 |
300 |
µs |
IL |
Laching current |
T1 = 25°C, VD = 5V |
350 |
1000 |
mA |
IH |
Holding current |
T1 = 25°C, VD = 5V |
40 |
100 |
mA |
|
| |
| GATE TRIGGER CHARACTERISTICS AND RATINGS |
| |
Symbol |
Parameter |
Conditions |
Typ. |
Max. |
Units |
VGT |
Gate Trigger Voltage |
VDPM= 5V, TCASE= 25°C |
1.0 |
3.5 |
V |
IGT |
Gate Trigger Current |
VDPM= 5V, TCASE= 25°C |
- |
200 |
mA |
VGD |
Gate non-trigger voltage |
At VDPM TCASE= 125°C |
- |
0.25 |
V |
IGD |
Gate non-trigger current |
At VDPM TCASE= 125°C |
- |
- |
A |
VFGM |
Peak forward gate voltage |
Anode positive with respect to cathode |
- |
30 |
V |
VFGM |
Peak forward gate voltage |
Anode negative with respect to cathode |
- |
0.25 |
V |
VRGM |
Peak reverse gate voltage |
|
- |
5 |
V |
IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
- |
30 |
A |
PGM |
Peak gate power |
See table, fig. 4 |
- |
150 |
W |
PG(AV) |
Mean gate power |
|
- |
10 |
W |
|
| |
|
|
| PACKAGE OUTLINE-G |
|
|
| |
| |
| For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. |
| |
|
| |
|
| |
| |
| |
| |
|